Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Patent
1995-11-16
1998-04-07
Young, Christopher G.
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
430 5, G03C 500, G03F 900
Patent
active
057362807
ABSTRACT:
A method of estimation of a resist pattern which calculates a resist pattern formed by projecting a mask pattern on a resist on a wafer by exposure and then developing it, comprised of a step of calculating a 2D light intensity of the exposure light projected on the wafer based on the mask pattern and the exposure conditions, a step of using the light intensities at peripheral positions of any position noted on the 2D plane of the wafer and the distance between the noted position and the peripheral positions as a basis for calculating and cumulatively adding the effect of the light intensities at a plurality of the peripheral positions on the exposure energy at the any noted position, a step of calculating a latent image formation intensity at the any noted position for the 2D plane of the wafer, a step of finding the distribution of the latent image formation intensity in the 2D plane of the wafer, a step of determining a threshold value of the latent image formation intensity corresponding to the amount of exposure and the development conditions, and a step of finding a contour at the threshold value for the distribution of the latent image formation intensity, the pattern defined by the contour being estimated as the resist pattern. Also, a method of exposure based on the same.
REFERENCES:
patent: 5316896 (1994-05-01), Fukuda et al.
patent: 5415952 (1995-05-01), Haruki et al.
patent: 5434026 (1995-07-01), Takatsu et al.
Sony Corporation
Young Christopher G.
LandOfFree
Method of estimation of resist pattern and method of exposure ba does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of estimation of resist pattern and method of exposure ba, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of estimation of resist pattern and method of exposure ba will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-11112