Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1978-06-21
1979-06-12
Dixon, Harold A.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250492B, A61K 2702
Patent
active
041581415
ABSTRACT:
The specification describes a process for minimizing ion scattering and thereby improving resolution in ion beam lithography. First, a substrate coated with a layer of ion beam resist is provided at a chosen spaced distance from an ion beam source. Next, a monocrystalline membrane with a patterned ion absorption region is positioned at a predetermined location between the substrate target and the ion beam source. The patterned ion absorption region may be either an ion absorption mask, such as gold, deposited on the surface of the monocrystalline membrane, or a pattern of ion-damaged regions within the monocrystalline membrane. Finally, a collimated wide area ion beam is passed perpendicular to the surface of the membrane and through crystal lattice channels therein which are exposed by the patterned ion absorption region and which extend perpendicular to the membrane surface. The parallel paths established by the channels in the membrane provide low resistance paths to the passage of ion beams and consequently minimize the angle of deflection of the ions passing from the membrane to the target resist layer.
REFERENCES:
"Electrical Activation Processes . . ." by Cembali et al., Radiation Effects, 1975, vol. 26, pp. 161-171.
"Effects of Ion Implantation . . ." by A. J. Learn et al., Journal of Applied Physics, vol. 48, No. 1, Jan. 1977, pp. 308-311.
"Measurement of Lateral Spread . . ." by W. A. Grant et al., Radiation Effects, 1976, vol. 29, pp. 189-190.
Seliger Robert L.
Sullivan Paul A.
Bethurum W. J.
Dixon Harold A.
Hughes Aircraft Company
Lachman Mary E.
MacAllister W. H.
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