Coherent light generators – Particular resonant cavity – Distributed feedback
Patent
1995-08-31
1997-08-19
Davie, James W.
Coherent light generators
Particular resonant cavity
Distributed feedback
372 45, H01S 308, H01S 319
Patent
active
056595620
ABSTRACT:
A semiconductor laser has a semiconductor substrate, an active layer disposed indirectly on the semiconductor substrate, a barrier layer disposed on the active layer having a larger band gap energy than the active layer, and an embedded diffraction grating of stripes of a semiconductor material, the stripes having a width in a resonator length direction, a length perpendicular to the resonator length direction, and a thickness, and are embedded in the barrier layer. The stripes have a constant pitch along the resonator length direction of the waveguide path, a constant thickness, and a width that changes in the resonator length direction or the width is constant and the thickness is changed.
REFERENCES:
patent: 5020072 (1991-05-01), Abe et al.
patent: 5386433 (1995-01-01), Ohkura et al.
Takemoto et al, "1.3-.mu.m Distributed Feedback Laser Diode With A Grating Accurately Controlled By A New Fabrication Technique", Journal of Lightwave Technology, vol. 7, No. 12, 1989, Dec. pp. 2072-2077.
Nishida et al., "Microloading Effect In InP Wet Etching", Electrochemical Society, vol. 140, No. 8, 1993, pp. 2414-2421.
Tidemand-Petersson et al., "Application Of Selective Area MOVPE For DFB Gratings With Modulated Coupling Coefficient", Materials Research Society Symposium Proceedings, vol. 340, 1994, pp. 153-158.
Davie James W.
Mitsubishi Denki & Kabushiki Kaisha
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