Method of forming an etched ohmic contact

Details Method of forming an etched ohmic contact Method of forming an etched ohmic contact

1993-10-04

1995-02-07

Thomas, Tom

Fishing, trapping, and vermin destroying

437190, 437202, 437246, 148DIG20, H01L 2144

Patent

active

053875486

ABSTRACT:
The present invention includes forming an etched ohmic contact (10, 9) by applying a layer of an etch susceptible contact material (14) to a III-V semiconductor substrate (11). A portion of the contact layer (14A) is alloyed with the substrate (11) to form are etch resistant area (14A) of the contact layer. The contact layer (14) is selectively etched to remove etch susceptible portions of the contact layer while leaving the etch resistant area (14A) on the substrate (11). Another alloy operation is performed to form ohmic contact between the etch resistant area (14A) and the substrate (11). Consequently, an etch ohmic contact (10, 9) that is substantially devoid of gold is formed.

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