Method of making a semiconductor device including carbon as a do

Details Method of making a semiconductor device including carbon as a do Method of making a semiconductor device including carbon as a do

1994-03-21

1995-02-07

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437107, 437129, 437133, H01R 2122

Patent

active

053875443

ABSTRACT:
While producing a III-V compound semiconductor layer, carbon is added to group III and V elements to control the p type conductivity of the semiconductor layer, forming a p type region. Then, a small amount of n type dopant is added to the group III and V elements together with the carbon to control the n type conductivity of the semiconductor layer, forming an n type region. Therefore, a sharp and precisely-controlled doping profile is obtained in the vicinity of the p-n junction, resulting in a semiconductor device having high initial-performance and high reliability.

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