Semiconductor memory device with an improved hierarchical power

Static information storage and retrieval – Powering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365228, G11C 700

Patent

active

056595174

ABSTRACT:
In a semiconductor integrated circuit device, a voltage setting circuit for setting a voltage level on the sub power source voltage line according to a reference voltage from a reference voltage generating circuit, is provided between a main power source voltage line and a sub power source voltage line. While a current consumption at the standby cycle is reduced, increase of the access delay is prevented. The voltage setting circuit includes a differential amplifier for differentially amplifying a voltage on the sub power source line and the reference voltages and a transistor responsive to an output of the differential amplifier for causing a current flow between the main and sub power source lines, or alternatively a diode-connected insulated gate type transistor receiving the reference voltage at a back gate thereof.

REFERENCES:
patent: 5280455 (1994-01-01), Kanaishi
patent: 5309399 (1994-05-01), Murotani
patent: 5341334 (1994-08-01), Maruyama
patent: 5519657 (1996-05-01), Arimoto
"Switched-Source-Impedance CMOS Circuit for Low Standby Subthreshold Current Giga-scale LSI's" Horiguchi et al., 1993 Symposium on VLSI Circuit Digest of Technical Papers, 47-48.
"Stand-by/Active Mode Logic for Sub-1 V 1G/4Gb DRAMS", Takashima et al. 1993 Symposium on VLSI Circuit Digest of Technical Papers, 83-84.
"A Testing Technique for ULSI Memory with On-chip Voltage Down-Converter", Tsukude et al., Proceedings, International Test Conference 1992, pp. 615-622.
"1V High-Speed Digital Circuit Technology with 0.5um Multi-Threshold CMOS,", Mutoh et al., 1993 IEEE, pp. 186-189.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device with an improved hierarchical power does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with an improved hierarchical power , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with an improved hierarchical power will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1109959

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.