Nonvolatile memory array with compatible vertical source lines

Details Nonvolatile memory array with compatible vertical source lines Nonvolatile memory array with compatible vertical source lines

1995-09-26

1997-08-19

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518511, 36518516, 257316, 257315, H01L 27115, H01L 2182

Patent

active

056595000

ABSTRACT:
A nonvolatile memory array has a plurality of diffused horizontal source lines (17), each source line (17) positioned between a pair of parallel horizontal stack conductors (ST). The plurality of the diffused horizontal source lines (17) are connected to at least one common vertical source conductor (17a). The common vertical source conductor (17a) includes continuous diffused regions (11) under each of said pair of parallel horizontal stack conductors (ST). In addition, the common vertical source conductor (17a) includes a metal conductor coupled to the continuous diffused regions at contacts (SC) located between the pairs of parallel horizontal stack conductors (ST). As a result, the stack conductors (ST) are straight. The straight-stack conductor (ST) configuration allows use of less space between a vertical source conductor (17a) and adjacent drain-column lines (18) and eliminates any need for use of vertical columns of dummy cells (10). Optional use of a straight-stack (ST) that is trimmed to a narrower width at the vertical source conductor (17a) results in a more certain conductive path under the straight stack conductors (ST).

REFERENCES:
patent: 5523969 (1996-06-01), Okazawa
patent: 5566106 (1996-10-01), Bergemont

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