Apparatus for depositing diamond and refractory materials compri

Details Apparatus for depositing diamond and refractory materials compri Apparatus for depositing diamond and refractory materials compri

1993-05-14

1995-02-07

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118665, 118712, 118724, 118725, 118729, 118730, C23C 1650

Patent

active

053872886

ABSTRACT:
An improved plasma enhanced chemical vapor deposition (CVD) reactor is provided for the synthesis of diamond and other high temperature materials such as boron nitride, boron carbide and ceramics containing oxides, nitrides, carbides and borides, or the like. An aspect of the present method enables a plasma to substrate distance to be optimized for a given surface. This has been found to enable a substantially uniform thin film coating or diamond or lake material to be deposited over a substrate.

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patent: 4804431 (1989-02-01), Ribner
patent: 4866346 (1989-09-01), Gaudreau et al.
patent: 4940015 (1990-07-01), Kobashi et al.
patent: 5311103 (1994-05-01), Asmussen et al.
Hatta et al. "A Simple And Efficient Microwave Launcher For Plasma Production" Plasma Sources Sci. Technology 1 (1992) 13-17.

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