Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-04-10
1997-08-19
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
H01L 2329, H01L 27118
Patent
active
056592027
ABSTRACT:
A semiconductor device is provided which comprises: a semiconductor chip having a semiconductor substrate, an insulation a film, a field oxide film and pads formed on a surface thereof; bumps respectively formed on the pads; inner leads bonded to the semiconductor chip with intervention of bumps; a metal interconnection formed in an indentation which is formed between the pads and an edge of the semiconductor chip by removing part of the insulation film and/or the field oxide film of the semiconductor chip; and a pair of dummy electrodes respectively formed between each of the pads and the metal interconnection and between the metal interconnection and the edge of the chip at a higher elevation than the metal interconnection and spaced apart a predetermined distance from the metal interconnection, the pair of dummy electrodes being provided for each of the inner leads, which is located thereabove.
REFERENCES:
patent: 5381030 (1995-01-01), Kasai
Crane Sara W.
Sharp Kabushiki Kaisha
Williams Alexander Oscar
LandOfFree
Semiconductor device with a pair of dummy electrodes below an in does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with a pair of dummy electrodes below an in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a pair of dummy electrodes below an in will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1106994