Interconnection of opposite conductivity type semiconductor regi

Details Interconnection of opposite conductivity type semiconductor regi Interconnection of opposite conductivity type semiconductor regi

1987-12-24

1988-11-15

Larkins, William D.

357 59, 357 67, 357 71, 357 92, H01L 2704

Patent

active

047853417

ABSTRACT:
A technique for making ohmic electrical interconnections between semiconductor regions of opposite conductivity type, without requiring metallic interconnection lines. This technique has applicability in any circuit using bipolar devices, and in particular is useful to provide a very dense static memory array of bipolar transistors. To join the opposite conductivity regions, intermediate layers are formed including a silicide of a refractory metal, such as W, Mo, Ta, etc. and at least one layer of doped polycrystalline semiconductor material. For a single crystal of silicon having N and P type regions, the refractory metal silicide forms an electrical connection to at least one doped polysilicon layer of a first conductivity type and to either a single crystal semiconductor region of the opposite conductivity type or to another polysilicon layer which also has the opposite conductivity type. As an example, an N type silicon region is interconnected to a P type silicon region by intermediate layers of N polysilicon--refractory metal silicide--P polysilicon.

REFERENCES:
patent: 3381182 (1968-04-01), Thronton
patent: 3519901 (1970-07-01), Bean et al.
patent: 3673471 (1972-06-01), Klein et al.
patent: 3777364 (1973-12-01), Schinella et al.
patent: 3806361 (1974-04-01), Lehner
patent: 3821781 (1974-06-01), Chang et al.
patent: 4041522 (1977-08-01), Oguey et al.
patent: 4148055 (1979-04-01), Edlinger et al.
patent: 4160989 (1979-07-01), de Brebisson et al.
patent: 4161745 (1979-07-01), Slob
patent: 4163246 (1979-07-01), Aomura et al.
patent: 4190466 (1980-02-01), Bhattacharyya et al.
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4450470 (1984-05-01), Shiba
Berger et al, IBM Tech. Disclosure Bulletin, vol. 21, No. 12, May 1979, p. 4886 (357-59).
Ho et al, IBM Tech. Disclosure Bulletin, vol. 21, No. 12, May 1979, pp. 4843-4844 (357-59).
Dingwall et al, IEEE International Electron Device Meeting, Technical Digest, Dec. 3, 1978, pp. 193-196.

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