Method of making DRAM cell with trench under device for 256 Mb D

Details Method of making DRAM cell with trench under device for 256 Mb D Method of making DRAM cell with trench under device for 256 Mb D

1995-02-27

1997-08-19

Niebling, John

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438702, H01L 21265, H01L 218242

Patent

active

056588160

ABSTRACT:
A trench structure for a high density trench DRAM cell is proposed. The proposed trench structure, which resides in part under the access device of the cell, does not require the use of expensive selective epi growth techniques. For the proposed cell, sub-minimum lithographic trench opening can be used (1) to improve the cell area, (2) to increase the device length, and (3) to improve the margin of diffusion strap. For the proposed cell structure, trench capacitance can be significantly increased without etching deeper trenches, or using thinner capacitor dielectric, by expanding the trench laterally under the device.

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N.C.C. Lu et al IEDM 1988 IEEE pp. 588-591, month unknown "A Buried Trench DRAM Cell Using A Self-Aligned Epitaxy Over Trench Technology".
L. Nesbit et al IEDM 1993 IEEE pp. 627-630 "A 0.6 .mu.m.sup.2 256 Mb Trench DRAM Cell with Self-Aligned Buried Strap (Best)", month unknown.

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