Semiconductor device comprising a broadband and high-gain monoli

Details Semiconductor device comprising a broadband and high-gain monoli Semiconductor device comprising a broadband and high-gain monoli

1993-11-02

1995-01-31

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257276, 257277, 257536, 330277, H01L 2980

Patent

active

053861302

ABSTRACT:
Semiconductor device including a distributed-type monolithic integrated circuit on a substrate, operating in the high frequency and/or microwave range, this distributed circuit having a plurality of coupled stages each having at least a transistor with a first electrode being AC connected to ground. The first electrode is connected to ground by two branches, a first branch being connected directly to a first ground stub and a second branch being connected to a second ground stub through a resistor.

REFERENCES:
patent: 4072979 (1978-02-01), Palara
patent: 4456888 (1984-06-01), Ayasli
patent: 4751562 (1988-06-01), Yamamura
patent: 4853649 (1989-08-01), Seino et al.
patent: 4864250 (1989-09-01), Bacon
patent: 4939485 (1990-07-01), Eisenberg
patent: 5170235 (1992-12-01), Tanino
1991 IEEE MTT-S International Microwave Symposium Digest, vol. 2, 10 Jun. 1991, Boston, pp. 437-440.

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