Method and apparatus for determination of interstitial oxygen co

Details Method and apparatus for determination of interstitial oxygen co Method and apparatus for determination of interstitial oxygen co

1993-03-29

1995-01-31

Dzierzynski, Paul M.

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

250340, G01N 2135

Patent

active

053861183

ABSTRACT:
A method and apparatus disclosed by this invention allows determination of the interstitial oxygen concentration in a silicon single crystal to be effected stably and accurately without being appreciably affected by change of the temperature of a sample under test. The interstitial oxygen concentration in the silicon single crystal is determined on the basis of the value of:

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patent: 5066599 (1991-11-01), Kaneta et al.
B. Pajot, et al., "Quantitative Spectroscopy of Interstitial Oxygen in Silicon", Dec. 1985, pp. 3034-3037, Journal of the Electrochemical Society, vol. 132, No. 12.
F. Shimura, et al., "Heterogeneous distribution of interstitial oxygen in annealed Cxochralski-grown silicon crystals", pp. 867-870, Applied Physics Letters, vol. 38, No. 11, 1 Jun. 1981.
G. K. Agopian, et al., "Determination of Interstitial Oxygen in Silicon Using Internal Calibration with Two Phonon Peaks", IBM Technical Disclosure Bulletin, pp. 1389-1390, vol. 23, No. 4, Sep. 1980.
K. G. Barraclouch, et al., "Calibration of Infrared Absorption by Gamma Activation Analysis for Studies of Oxygen in Silicon", Journal of the Electrochemical Society, pp. 187-191, vol. 133, No. 1, Jan. 1986.
Disclosed anonymously, "Spectroscopic Determination of Wafer Thickness for Measurement of Interstitial Oxygen by Dispersive Infra-red Spectroscopy", Research Disclosure, p. 216, Havant GB, Apr. 1986.

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