High speed booster circuit

Details High speed booster circuit High speed booster circuit

1990-06-18

1991-10-22

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307578, 307482, 307264, 363 60, H03K 1756, H03K 1901

Patent

active

050598163

ABSTRACT:
A booster circuit comprises first to third MOS-FETs, and a capacitance element. In the first MOS-FET, a gate is connected to a first signal terminal, a drain is connected to an output terminal, and a source is connected to a first power supply. In the second MOS-FET, a gate is connected to a predetermined point, a drain is connected to a signal terminal, to which a first signal being an inverted signal of a signal applied to the first signal terminal is applied, and a source is connected to the predetermined point. In the third MOS-FET, a gate is connected to a second power supply, a drain is connected to a second signal terminal, and a source is connected to the predetermined point. The capacitance element is connected at one terminal to a signal terminal, to which a second signal being an inverted signal of a signal applied to the second signal terminal is applied, and at the other terminal to the output terminal. In operation, a predetermined voltage is obtained with a high speed at the output terminal.

REFERENCES:
patent: 4346310 (1982-08-01), Carter
patent: 4574203 (1986-03-01), Baba
patent: 4612462 (1986-09-01), Asano et al.
patent: 4649289 (1987-03-01), Nakano
patent: 4725746 (1988-02-01), Segawa et al.

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