Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1993-10-14

1994-11-15

Fears, Terrell W.

Static information storage and retrieval

Format or disposition of elements

365149, 365182, 36523008, G11C 1300

Patent

active

053654749

ABSTRACT:
An improved semiconductor memory device which can increase the capacitor capacitance and improve the processing accuracy of a storage node can be obtained. The device includes a plurality of first field regions which are formed at a predetermined pitch in the running direction of bit line. A plurality of second field regions are formed adjacent to and parallel to the rows formed by the plurality of first field regions, and formed at the same pitch as above. The first field regions and the second field regions are formed shifted from each other by 1/4 pitch in the running direction of bit line. A stacked-type capacitor having bit line buried under cell plate electrode is provided in the first field regions and the second field regions.

REFERENCES:
patent: 5265045 (1993-11-01), Nishio et al.

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