Method of manufacturing HEMT device using novolak-based positive

Details Method of manufacturing HEMT device using novolak-based positive Method of manufacturing HEMT device using novolak-based positive

1993-06-14

1995-01-31

Fourson, George

Fishing, trapping, and vermin destroying

437203, 437944, 437184, H01L 21306, H01L 2128

Patent

active

053858514

ABSTRACT:
In a method of manufacturing a semiconductor apparatus, a resist is coated on a semiconductor substrate and baked. The resist is exposed with an electron beam, and an invertedly tapered opening is formed. Recess etching is performed on the semiconductor substrate through the opening. An electrode is formed at a location determined by the recess etching.

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IBM Technical Disclosure Bulletin, "Image Reversal Lift-Off Process Using a Release Layer" vol. 29, No. 11, Apr. 1987, p. 4935.
Wolf, S. and R. Tauber "Silicon Processing for the VLSI ERA", Lattice Press, Sunset Beach, Calif., 1986 p. 518.

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