Diamond doping

Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation

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427140, 427530, 427533, B05D 306

Patent

active

053857623

ABSTRACT:
A method of producing a doped diamond, typically a boron doped diamond, is provided. The method involves multiple cold implantation/rapid annealing steps. A doped diamond can be produced containing a high concentration of dopant atoms.

REFERENCES:
patent: 4976987 (1990-12-01), Musket et al.
Prins, Johan F., "Activation of boron-dopant atoms in ion-implanted diamonds", Physical Review B, vol. 38, No. 8, 15 Sep. 1988-I, pp. 5576-5584.

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