Semiconductor integrated circuit device having an improved bondi

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

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Details

257786, H01L 2131, H01L 2940

Patent

active

053651120

ABSTRACT:
A contact plug formed in a contact hole formed in a boron-containing BPSG insulating film, and a pad bed formed under a bonding pad portion of a wiring are formed of a three-layered polysilicon film, thus reducing the number of fabrication steps. A protective film may be provided on the pad bed. This structure facilitates the formation of the pad bed and protects the pad bed that prevents film shearing at the bonding pad portion, thereby improving the adhesion to the insulating film.

REFERENCES:
patent: 4472730 (1984-09-01), Ohta
patent: 4916397 (1990-04-01), Masuda et al.
patent: 4933305 (1990-06-01), Kikkawa

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