Semiconductor device with multi-layered wiring structure

Details Semiconductor device with multi-layered wiring structure Semiconductor device with multi-layered wiring structure

1993-07-26

1994-11-15

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257742, 257765, 257369, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

053651103

ABSTRACT:
A semiconductor circuit includes a signal line for transmitting bidirectional pulse currents and a power line for supplying a DC current, and the signal line and the power line are formed of different metal wiring layers. The power line is formed of a metal having higher melting point, higher electromigration resistance and lower resistivity than those of the signal line. As a result, the reliability of the wiring of the semiconductor device can be improved.

REFERENCES:
patent: 4513309 (1985-04-01), Cricchi
patent: 4647340 (1987-03-01), Szluk et al.
patent: 4677735 (1987-07-01), Malhi
patent: 4879582 (1989-11-01), Kimura et al.
patent: 4937652 (1990-06-01), Okumura et al.
patent: 5061981 (1991-10-01), Hall
1989 Symposium on VLSI Technology, Digest of Technical Papers, "A Generalized Lifetime Model for Electromigration Under Pulsed AC/DC Stress Conditions", IEEE Cat. No. 89 CH 2694-8, pp. 19-20, K. Hatanaka et al.

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