Frontside illuminated charge-coupled device with high sensitivit

Details Frontside illuminated charge-coupled device with high sensitivit Frontside illuminated charge-coupled device with high sensitivit

1993-02-08

1994-11-15

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257236, 257241, 257250, H01L 2978, H01L 2714, H01L 3100

Patent

active

053650921

ABSTRACT:
A CCD which is designed and processed so that most of each pixel is covered only with an ultra-thin gate electrode so that the CCD can be frontside illuminated and still achieve good sensitivity in the ultra-violet and soft x-ray spectral range. More specifically, in the present invention, the usual three gate structure and corresponding polysilicon layers 1, 2 and 3 of conventional thickness are reduced in width and supplemented by a fourth ultra-thin layer of polysilicon dubbed herein, poly 4, that is deposited over the entire array. This fourth layer, poly 4, makes contact with poly 3, so that when poly 3 is driven, it also drives poly 4, thus allowing charge to collect and transfer as in a normal three phase CCD. However, because the deposition thickness of the poly 4 layer is on the order of 400 Angsttoms, as opposed to conventional thicknesses of 2000 to 5000 Angsttoms, poly 4 is essentially transparent to photons and thereby allows achievement of high quantum efficiency.

REFERENCES:
patent: 5005063 (1991-04-01), Janesick
History and Advancements of Large Area Array Scientific CCD Imagers by James Janesick, Tom Elliott, Astronomical Society of Pacific Conference Series '91, Tucson, Ariz.

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