Photodetector and opto-electronic integrated circuit with guard

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

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257186, 257459, 257466, 257623, H01L 2714

Patent

active

053650875

ABSTRACT:
A photodetector of the present invention is devised to reduce the dark current by employing a novel guard ring structure suitable for a mesa type photodiode (PD). Namely, the PD of the present invention has the structure in which a p-type or n-type semiconductor region which is to be a light receiving area is surrounded by a semiconductor region (guard ring) of the same conduction type. A guard ring electrode is formed on the guard ring region and is kept at the same potential as an electrode on a region desired to reduce the dark current. Also, an opto-electronic integrated circuit of the present invention has such a structure that a PD, which is the photodetector of the present invention, and a circuit element such as a transistor are formed on a common semiconductor substrate and that an anode electrode or a cathode electrode of the PD is conductively connected to a gate electrode of a field-effect transistor or to a base electrode of a bipolar transistor.

REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4616247 (1986-10-01), Chang et al.
patent: 4654678 (1987-03-01), Lightstone et al.
patent: 4857980 (1989-08-01), Hoeberechts
patent: 5107318 (1992-04-01), Makiuchi et al.
G. Sasaki et al., "Optoelectronic Integrated Receivers on InP Substrates by Organometallic Vapor Phase Epitaxy", Journal of Lightwave Technology, vol. 7, No. 10, Oct. 1989, pp. 1510-1514.

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