Semiconductor memory device having stacked capacitor-type memory

Details Semiconductor memory device having stacked capacitor-type memory Semiconductor memory device having stacked capacitor-type memory

1983-12-12

1987-02-03

Edlow, Martin H.

357 51, 357 54, H01L 2978

Patent

active

046411666

ABSTRACT:
In a semiconductor memory device having stacked capacitor-type memory cells, the capacitor of each memory cell comprises an electrode, an insulating layer, and a counter electrode. The electrode is connected electrically to a source or drain region of a transfer transistor and extends over a part of a word line adjacent to another word line serving a gate electrode of the transfer transistor, at which part no memory cell is formed.

REFERENCES:
patent: 3740731 (1973-06-01), Ohwada et al.
patent: 3811076 (1974-05-01), Smith, Jr.
patent: 3893146 (1975-07-01), Heeren
patent: 4151607 (1979-04-01), Koyanagi et al.
patent: 4246593 (1981-01-01), Bartlett
patent: 4355374 (1982-10-01), Sakai et al.

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