Method for determining the characteristic behavior of a metal-in

Details Method for determining the characteristic behavior of a metal-in Method for determining the characteristic behavior of a metal-in

1982-12-30

1985-04-02

Levy, Stewart J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 60C, 324158T, G01R 3126, G01R 2726

Patent

active

045090122

ABSTRACT:
First and second voltage sweeps are applied to a metal-insulator-semiconductor device with the device in a deep depletion mode during at least a portion of each sweep. Capacitance-voltage characteristics of the device are determined for at least a portion of each sweep while the device is in the deep depletion mode. Minority carrier generation parameters of the device in the deep depletion mode are determined based on the capacitance-voltage characteristics for the first and second voltage sweeps.

REFERENCES:
patent: 3731192 (1973-05-01), Miller
patent: 3840809 (1974-10-01), Yun
patent: 3882391 (1975-05-01), Liles et al.
patent: 3995216 (1976-11-01), Yun
patent: 4325025 (1982-04-01), Corcoran et al.
"Determination of Minority Carrier Lifetime Using MIS Tunnel Diodes", S. Kar, Applied Physics Letters, vol. 25, No. 10, Nov. 1974, pp. 587-589.
Emery and DuBow, "Automated Electronic Analysis of Solar Cells", 14th IEEE Photovoltaic Specialists Conference, Jan. 1980, pp. 506-510.

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