Self-aligned oxide isolated process and device

Details Self-aligned oxide isolated process and device Self-aligned oxide isolated process and device

1982-01-18

1984-04-24

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29578, 29580, 148187, 156653, 156657, 156662, 357 50, H01L 21316, H01L 2176

Patent

active

044439326

ABSTRACT:
Improved self-aligned semiconductor devices are made using two sets of superposed pattern forming layers; a master mask layer set containing the self-aligned patterns, and a pattern selector layer set which allows different apertures in the master mask layer to be selectively re-opened so that different device regions may be sequentially formed. The master mask layer is a double layer of a first material resistant to typical device forming processes, covered by a second etch stop material. The selector layer may be a single process resistant material or a double layer. Using combinations of silicon oxide and nitride, the process is applied to the formation of silicon islands with emitters and emitter, base, and collector contacts self-aligned to each other and a surrounding oxide isolation region. Significant area and cost savings are achieved without additional masking steps or precision alignments.

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patent: 4252582 (1981-02-01), Anantha et al.
patent: 4271583 (1981-06-01), Kahng et al.

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