Thyristor with adjustable base-to-emitter resistance

Details Thyristor with adjustable base-to-emitter resistance Thyristor with adjustable base-to-emitter resistance

1987-03-04

1989-02-07

Clawson, Jr., Joseph E.

357 20, 357 68, 357 86, 357 51, H01C 2974

Patent

active

048035386

ABSTRACT:
A thyristor having a semiconductor body with an emitter zone and a base zone formed thereon, an emitter electrode seated on the emitter zone, and a base electrode seated on the base zone, the emitter electrode being formed with a recess, includes a base emitter p-n junction disposed within the recess and adjoining a surface of the semiconductor body, a gate electrode seated on the base zone and an ohmic resistance integrated in the semiconductor body between the emitter electrode and the gate electrode, the p-n junction being locally bridged by one of the gate and emitter electrodes, the ohmic resistance having a value adjustable in accordance with a removal of a part of at least one of the gate and emitter electrodes.

REFERENCES:
patent: 4016592 (1977-04-01), Yatsuo et al.
patent: 4053922 (1977-10-01), Ferro

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