Semiconductor device sram to prevent out-diffusion

Details Semiconductor device sram to prevent out-diffusion Semiconductor device sram to prevent out-diffusion

1986-06-18

1989-02-07

James, Andrew J.

357 235, 357 45, 357 67, H01L 2348

Patent

active

048035343

ABSTRACT:
A semiconductor device includes a first conductor layer into which is diffused an impurity for lowering the resistance, and a second conductor layer provided on the upper side of the first conductor layer through a stopper layer which suppresses out-diffusion of the impurity. By virtue of the existence of the stopper layer, it is possible to inhibit the above-described impurity from being diffused into the second conductor layer. In a SRAM, resistance variations between high-resistance elements which correspond to the second conductor layer can be suppressed, so that it is possible to prevent lowering of the yield with respect to the electrical reliability. In a SRAM, further, the resistance of the high-resistance elements is not lowered; therefore, it is possible to reduce the power consumption.

REFERENCES:
patent: 4376983 (1983-03-01), Tsaur et al.
patent: 4392150 (1983-07-01), Covrreges
patent: 4488166 (1984-12-01), Lehrer
patent: 4524377 (1985-06-01), Eguchi
patent: 4536941 (1985-08-01), Kuo et al.
patent: 4673969 (1987-06-01), Ariizumi et al.

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