Vertical MOSFET having a proof structure against puncture due to

Details Vertical MOSFET having a proof structure against puncture due to Vertical MOSFET having a proof structure against puncture due to

1987-02-25

1989-02-07

Carroll, J.

357 20, 357 41, 357 88, 357 90, H01L 2978, H01L 2906, H01L 2702

Patent

active

048035327

ABSTRACT:
A vertical MOSFET having a reduced drain to source resistance is described as comprising a well region which are formed with a suitable distance from a high resistivity drain substrate and in contact with a source electrode. Undesirable parasitic bipolar transistor action can be prevented.

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I. Yoshida et al., "A High Power MOSFET . . . Structure", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 4, Aug. 1976, pp. 472-477.
Severns, "MOSFETs Rise to New Levels of Power", Electronics International, vol. 53, No. 12, May 1980, pp. 143-152.
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Bell, G. et al., "SIPMOS Technology, an Example of VLSI Precision . . . ", Siemens Forsch v. Entwicki-Ber. Bd. 9 (1980) Nr. 4 c. Springer-Verlag 1980.
Hexfet Databook, Chapter 5, "The HEXFET's Integral Reverse Rectifier . . . ", International Rectifier, El Segundo, California c. 1981.

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