Schottky gate field effect transistor and manufacturing method

Details Schottky gate field effect transistor and manufacturing method Schottky gate field effect transistor and manufacturing method

1987-02-17

1989-02-07

Wojciechowicz, Edward J.

357 22, 357 89, 357 90, H01L 2948

Patent

active

048035262

ABSTRACT:
In a GaAs field effect transistor of the invention, a gate layer is formed on a semi-insulative substrate. The gate layer is made of a conductive material forming a Schottky junction between the substrate and the gate layer. Source and drain regions are formed in the substrate to have a first conductivity type. Barrier layers are formed in the substrate to have a second conductivity type. The barrier layers are formed to surround the source and drain regions, and suppress a current component from leaking from the source and drain regions to the substrate when the field effect transistor is operative.

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