Structured resistive field shields for low-leakage high voltage

Details Structured resistive field shields for low-leakage high voltage Structured resistive field shields for low-leakage high voltage

1983-12-30

1986-04-01

Larkins, William D.

357 59, 357 238, H01L 2904, H01L 2944

Patent

active

045801568

ABSTRACT:
A segmented semi-insulating polysilicon (SIPOS) layer is used between conductors making contact to the surface of a silicon device in order to shield the surface from the effects of charge on dielectric layers above the surface so as to maintain breakdown voltages. The segmenting of the SIPOS layer significantly increases the resistance thereof and thereby limits leakage generated by the layer.

REFERENCES:
patent: 3491273 (1970-01-01), Stiegler
patent: 3728590 (1973-04-01), Kim et al.
patent: 3766448 (1973-10-01), Luce et al.
patent: 3890698 (1975-06-01), Clark
patent: 3906539 (1975-09-01), Sauerman et al.
patent: 3911473 (1975-10-01), Nienhuis
patent: 4009483 (1977-02-01), Clark
patent: 4157563 (1979-06-01), Bosselar
patent: 4297149 (1981-10-01), Koons et al.

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