Method and structure for inhibiting dopant out-diffusion

Details Method and structure for inhibiting dopant out-diffusion Method and structure for inhibiting dopant out-diffusion

1984-04-13

1987-02-03

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29577C, 29559, 427 59, 148DIG34, 357 71, H01L 21285

Patent

active

046400044

ABSTRACT:
A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer between the doped silicon substrate and the refractory metal silicide conductive layer. Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer of refractory metal between the refractory metal nitride layer and the silicon substrate.

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