Method of forming monocrystalline thin films by parallel beam sc

Details Method of forming monocrystalline thin films by parallel beam sc Method of forming monocrystalline thin films by parallel beam sc

1985-07-01

1987-04-07

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148175, 148187, 148DIG93, 427 531, H01L 21263, H01L 21208, B05D 306

Patent

active

046558500

ABSTRACT:
A new method of manufacturing semiconductor devices, in which monocrystalline thin film is formed by melting and recrystallizing either amorphous or polycrystalline thin film via annealing by radiation of energy beams, wherein the manufacturing method comprises the formation of a belt-shaped high melting point metal film having a width narrower than the diameter of the radiated energy beams on either an amorphous or polycrystalline thin film and beam scanning in parallel with the belt, by means of radiating energy beams, onto the belt-shaped high melting point metal film, so as to generate a nucleus in a limited area beneath the belt-shaped thin film at the moment the film-covered amorphous or polycrystalline area dissolves recrystallizes so that the said recrystallized area eventually grows into a monocrystalline configuration.

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Lasky, J. B., Jour. Appl. Phys., 53, (1982) 9038.
Egami et al, Appl. Phys. Letts., 43, (Dec. 1983) 1023.

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