Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-06-24
1985-04-02
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576B, 29578, 29590, 148 15, 148187, 148175, 156657, 357 51, H01L 2120, H01L 21306
Patent
active
045078491
ABSTRACT:
A groove having a semiconductor layer buried therein is formed on one main surface of a semiconductor substrate, said groove providing a region for separating adjacent semiconductor elements. In the first step, a groove is formed on the substrate surface, followed by depositing a semiconductor layer thick enough to fill the groove. A substantial difference in impurity concentration is provided between the semiconductor layer within the groove and the other region of the semiconductor layer. The semiconductor layer is selectively allowed to remain within the groove by utilizing the difference in impurity concentration.
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Roy Upendra
Tokyo Shibaura Denki Kabushiki Kaisha
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