Method using surface photovoltage (SPV) measurements for reveali

Details Method using surface photovoltage (SPV) measurements for reveali Method using surface photovoltage (SPV) measurements for reveali

1984-02-29

1986-07-01

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, G01R 3126

Patent

active

045982490

ABSTRACT:
A method for revealing the presence of heavy metal impurities that may have been introduced during the formation of a layer, such as the deposition of an epitaxial layer on a semiconductor substrate, uses the constant-magnitude steady-state surface photovoltage (SPV) method for determining the minority-carrier diffusion length by essentially two determination steps. A large ratio of the respective diffusion lengths determined before (actually measured or based on a priori knowledge of similar material) and after the epitaxial deposition step is indicative of the presence of a heavy metal impurity in the epitaxial layer. The method is based on the fact that the contaminating metal distributes itself substantially uniformly not only through the epitaxial layer but also throughout the substrate.

REFERENCES:
patent: 4333051 (1982-06-01), Goodman
patent: 4420722 (1983-12-01), Todd
W. E. Phillips, "Interpretation of Steady-State Surface Photovoltage Measurements in Epitaxial Semiconductor Layers" Sol. St. Elec. 15, (1927), p. 1097.
A. M. Goodman et al., "Silicon-Wafer Process Evaluation Using Minority-Carrier Diffusion-Length Measurement by the SPV Method" RCA Review, vol. 44, Jun. 1983, pp. 326-341.

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