Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers

Details Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers

1984-12-27

1986-07-01

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 84, 430 85, 430 95, G03G 5082

Patent

active

045980322

ABSTRACT:
A photoconductive member having a substrate for photoconductive member and a light-receiving layer having photoconductivity provided on said substrate is prepared in which the light-receiving layer comprises from the side of said substrate a first layer (I) constituted of an amorphous material containing silicon atoms, a second layer (II) constituted of an amorphous material containing silicon atoms and germanium atoms and a third layer (III) constituted of an amorphous material containing silicon atoms and carbon atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

REFERENCES:
patent: 4451546 (1984-05-01), Kawarzura et al.
patent: 4495262 (1985-01-01), Matsuzaki et al.

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