Method to fabricate vertical fuse devices and Schottky diodes us

Details Method to fabricate vertical fuse devices and Schottky diodes us Method to fabricate vertical fuse devices and Schottky diodes us

1990-08-20

1991-10-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437 31, 437 33, 437200, 437201, 437245, 357 71, 357 34, H01L 2190, H01L 2144

Patent

active

050595555

ABSTRACT:
An improved method for fabricating polysilicon Schottky clamped transistors and vertical fuse devices in the same semiconductor structure is disclosed. The resulting structure yields an improved Schottky clamped transistor and vertical fuse device. The improved Schottky transistor has a silicide rectifying contact between the base and collector of the transistor, the vertical fuse is provided with a direct contact between an aluminum contact metal and a polysilicon emitter contact.

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