High density EEPROM cell array which can selectively erase each

Details High density EEPROM cell array which can selectively erase each High density EEPROM cell array which can selectively erase each

1994-05-16

1995-10-03

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

257315, 257316, H01L 2968

Patent

active

054557909

ABSTRACT:
Each byte of data in a high-density, electrically-erasable, programmable read-only-memory (EEPROM) cell array is selectively erased by forming a plurality of memory cells in each of a plurality of P-wells where the memory cells in each P-well are formed one byte wide by n rows in length. By forming the memory cells in each P-well to be one byte wide by n rows in length, each byte of data can be selectively erased by identifying the corresponding P-well and the row within the P-well.

REFERENCES:
patent: 4375087 (1983-02-01), Wanlass
patent: 4561004 (1985-12-01), Kuo et al.
patent: 4688078 (1987-08-01), Hseih
patent: 5012307 (1991-04-01), Gill et al.
patent: 5177705 (1993-01-01), McElory et al.
patent: 5218568 (1993-01-01), Lin et al.

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