Semiconductor device having reformed pad

Details Semiconductor device having reformed pad Semiconductor device having reformed pad

1994-06-07

1995-10-03

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257781, 257784, H05K 300

Patent

active

054554616

ABSTRACT:
A wire bonding method comprising the steps of (a) disconnecting a first wire which is bonded on a first pad which is provided on a substrate, (b) forming a second pad on the first pad, and (c) bonding a second wire on the second pad, so that the second wire is electrically connected to the first pad. The step (a) may completely remove the first wire from the first pad, and the step (b) may form the second pad at least on a top surface of the first pad including a part which is damaged by the removal of the first wire. On the other hand, the step (a) may cut the first wire so that a tip end of the first wire remains bonded on the first pad, and the step (b) may form the second pad at least on a top surface of the first pad so as to completely cover the remaining tip end of the first wire.

REFERENCES:
patent: 3629669 (1971-12-01), Kauppila
patent: 4415606 (1983-11-01), Cynkar et al.
patent: 4683652 (1987-08-01), Hatfield
patent: 5164814 (1992-11-01), Okumura

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