Method for simulating diffusion of impurity materials in semicon

Details Method for simulating diffusion of impurity materials in semicon Method for simulating diffusion of impurity materials in semicon

1997-09-18

2000-01-04

Teska, Kevin J.

G06F 9455

Patent

active

060119144

ABSTRACT:
A method for simulating the deformation of regions in a semiconductor device due to oxidation. An oxidation calculation triangular mesh is deformed according to an oxidation calculation, and a diffusion calculation triangular mesh simulates the diffusion of impurity materials. Diffusion calculation control volumes are defined to each vertex of the diffusion calculation triangular mesh. The diffusion calculation triangular mesh and the diffusion calculation control volumes are deformed according to the deformation of the oxidation calculation triangular mesh. Impurity material concentrations are altered according to volume ratio of the diffusion calculation control volume after deformation to the diffusion calculation control volume before deformation. A new diffusion calculation triangular mesh and corresponding new diffusion calculation control volumes are defined for deformed shapes of regions that guarantee Delaunay partitioning. The amount of the impurity material in the diffusion calculation control volumes after deformation is fully transferred to the new diffusion calculation control volumes. A diffusion calculation is executed using the new diffusion calculation control volumes and the impurity material concentrations on the new diffusion calculation triangular mesh. The above process is repeated for a predetermined period of time. The simulation conserves the gross dose of the impurity material with a high degree of accuracy and a short calculation time.

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