Photovoltaic device having a semiconductor grade silicon layer f

Details Photovoltaic device having a semiconductor grade silicon layer f Photovoltaic device having a semiconductor grade silicon layer f

1992-07-30

1995-10-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 51, 257431, 257461, 257462, 257 52, 136258, H01L 2904, H01L 2714, H01L 3100

Patent

active

054554306

ABSTRACT:
The disclosure relates to a semiconductor device comprising silicon having a substrate composed of low grade silicon, a silicon layer whose silicon purity is higher than that of the low grade silicon formed on the substrate and an electrode formed on the silicon layer. In the device, the low grade silicon may be selected from metallurgical grade silicon and silicon whose purity is less than 99.99%, and the silicon layer may be over 99.999% purity or semiconductor grade.

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patent: 4383268 (1983-05-01), Martinelli et al.
patent: 4492810 (1985-01-01), Ovshinsky et al.
patent: 4818337 (1989-04-01), Barnett et al.
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5165548 (1992-11-01), Dumler et al.
patent: 5198071 (1993-03-01), Scudder et al.

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