Method for fabricating GaAs bipolar integrated circuit devices

Details Method for fabricating GaAs bipolar integrated circuit devices Method for fabricating GaAs bipolar integrated circuit devices

1985-12-13

1987-04-07

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 148 15, 148175, 148187, 148DIG84, 357 16, 357 34, 357 91, H01L 21265, H01L 2948

Patent

active

046549609

ABSTRACT:
Bipolar transistors and other electronic structures are fabricated on a gallium arsenide (GaAs) substrate to form an integrated circuit device. This process is made possible by development of an ion implant technique which uses an acceptor material to create a P type region, boron or protons to create insulating regions, and silicon or selenium to create an N type region. The process avoids the difficult problems encountered in diffusion methods, and, due to the precise control available with the ion implant method, makes possible the fabrication of IC quality transistors consistently over a substrate. This same control enables the fabrication of integrated circuits with improved device packing density and reduced parasitic parameters.

REFERENCES:
patent: 3897273 (1975-07-01), Marsh et al.
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4380774 (1983-04-01), Yoder
patent: 4400221 (1983-08-01), Rahilly
patent: 4403397 (1983-09-01), Bottka et al.
patent: 4484207 (1984-11-01), Nishizawa et al.
Yaun et al. Electronics Letts. 16, Jul. 1980, p. 637.

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