Method for multilevel programming of a nonvolatile memory, and a

Static information storage and retrieval – Floating gate – Multiple values

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36518519, 36518524, G11C 700

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active

06011715&

ABSTRACT:
A programming method for a nonvolatile memory includes the steps of: a) determining a current value of the threshold voltage; b) acquiring a target value of the threshold voltage; c) calculating a first number of gate voltage pulses necessary to take the threshold voltage from the current value to the target value; d) applying a second number of consecutive voltage pulses to the gate terminal of the cell, the second number being correlated to the first number and having a uniformly increasing amplitude; e) then measuring a current value of the threshold voltage; and repeating steps c) to e) until a final threshold value is obtained.

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