Thin capacitor dielectric by rapid thermal processing

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437241, 437242, 437243, 437235, 437919, H01L 2102

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054552044

ABSTRACT:
The invention provides a continuous rapid thermal process for forming a substantially uniform oxynitride film on fingered three-dimensional silicon structures comprising cleaning of the silicon substrate and growth of silicon oxide in the presence of ozone, nitridation of the silicon oxide layer in the presence of NH.sub.3 and reoxidation of the oxynitride layer in the presence of oxygen.

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