Method of forming a silicon-on-insulator (SOI) material having a

Details Method of forming a silicon-on-insulator (SOI) material having a Method of forming a silicon-on-insulator (SOI) material having a

1994-11-17

1995-10-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 437974, 148DIG12, 148DIG135, H01L 2176

Patent

active

054551935

ABSTRACT:
A silicon-on-insulator (SOI) material is formed from a bonded silicon wafer structure which includes, in order, a silicon handler substrate, an insulating oxide layer, a silicon device layer, a highly-doped silicon etch stop layer, and a top silicon substrate. The bonded silicon wafer structure is etched in a first anisotropic etching step to remove the top silicon substrate and expose the etch stop layer. Subsequently, a second anisotropic etching step is performed to remove a major portion but less than all of the etch stop layer, with the second anisotropic etching step continuing only until a substantially maximum degree of thickness uniformity is obtained in a remaining portion of the etch stop layer. The remaining portion of the etch stop layer is then removed, to yield a silicon-on-insulator material having a high degree of thickness uniformity.

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"A New Thinning Method for Obtaining Less than 100-nm-Thick Si Film on Wafer Bonding", Japanese Journal of Applied Physics, vol. 30, No. 6, Jun., 1991, pp. 1154-1157.

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