Process for fabricating a lateral bipolar junction transistor

Details Process for fabricating a lateral bipolar junction transistor Process for fabricating a lateral bipolar junction transistor

1995-01-31

1995-10-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 27, 437 28, 437 30, 437 50, 437 69, 437150, 437153, 437917, 437924, 437984, 148DIG10, 148DIG11, 257565, 257575, H01L 21265

Patent

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054551889

ABSTRACT:
A process for fabricating lateral bipolar junction transistor semiconductor device. Base and emitter regions are precisely aligned. The resulting lateral width of the base region of the transistor device is able be precisely controlled. A heavily-doped implantation region is formed underneath the base region of the transistor structural configuration such that electron carriers in the transistor are prevented from escaping from beneath the base region of the transistor.

REFERENCES:
patent: 4966858 (1990-10-01), Masquelier et al.
patent: 4971929 (1990-11-01), D'Anna et al.
patent: 5187109 (1993-02-01), Cook et al.
patent: 5256589 (1993-10-01), Hozumi
patent: 5387553 (1995-02-01), Moksvold et al.

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