Insulated gate bipolar transistor with multiple buffer layers

Details Insulated gate bipolar transistor with multiple buffer layers Insulated gate bipolar transistor with multiple buffer layers

1995-11-22

1997-08-05

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257140, 257145, 257147, 257575, H01L 2974, H01L 31111, H01L 27082

Patent

active

056545614

ABSTRACT:
A high-concentration n-type buffer layer and a low-concentration n-type buffer layer are provided between a p-type collector layer and a high-resistance n-type base layer, and respective impurity concentrations of the low-concentration n-type buffer layer and the high-concentration n-type buffer layer are set so that concentrations of carriers that propagate through the low-concentration n-type buffer layer and the high-concentration n-type buffer layer are in excess of the respective impurity concentrations thereof in an ON state. Thus, an insulated gate bipolar transistor having excellent withstand voltage, ON-state voltage and turn-off characteristics is obtained.

REFERENCES:
patent: 4618872 (1986-10-01), Baliga
patent: 4782372 (1988-11-01), Nakagawa et al.
patent: 4963951 (1990-10-01), Adler et al.
patent: 5355003 (1994-10-01), Tomomatsu
patent: 5512774 (1996-04-01), Nakagawa et al.
Proc. of the 6th Internat. Symposium on Power Semiconductor Devices & IC's, pp. 399-403, May 31-Jun. 2, 1994, T. Matsudai, et al., "Thin SOI IGBT Leakage Current and a New Device Structure For High Temperature Operation" .

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