Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Patent
1997-06-18
2000-09-19
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
257350, 257382, 257448, 257690, 257698, 257700, 257734, 257774, H01L 2348
Patent
active
061216836
ABSTRACT:
The present invention provides an integrated circuit structure in which an area necessary for making contact is assured in a multi-layered wiring structure even when a design rule is made rigorous. In a structure in which wires separated above and below by an interlayer insulating film are contacted, the wire at the lower layer is patterned into a pattern of the wire at the upper layer which are made to contact. Thereby, the present invention allows the area necessary for making the contact to be largely assured and to deal with the micronization.
REFERENCES:
patent: 5094965 (1992-03-01), Ozaki et al.
patent: 5625232 (1997-04-01), Numata et al.
patent: 5710462 (1998-01-01), Mizushima
patent: 5786616 (1998-07-01), Fukumoto et al.
Koyama Jun
Teramoto Satoshi
Yamazaki Shunpei
Abraham Fetsum
Semiconductor Energy Laboratory Co,. Ltd.
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