Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Patent
1997-10-06
2000-09-19
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
257203, 257204, 257335, 257390, 257392, H01L 2972
Patent
active
061216437
ABSTRACT:
A semiconductor device may be fabricated using a process in which a group of transistors connected between a high and low voltage sources are formed. The transistor among the group of transistors which is used for connection to the high voltage source has non-symmetrical source and drain regions. The device, exploits low operating voltages to construct new high performance transistors.
REFERENCES:
patent: 4104784 (1978-08-01), Klein
patent: 4280855 (1981-07-01), Bertin et al.
patent: 4514894 (1985-05-01), Kawagoe
patent: 4753897 (1988-06-01), Lund et al.
patent: 5040035 (1991-08-01), Gabara et al.
patent: 5252505 (1993-10-01), Yatsuda et al.
patent: 5541548 (1996-07-01), Crafts
patent: 5559353 (1996-09-01), Risch et al.
patent: 5633185 (1997-05-01), Yiu et al.
patent: 5648286 (1997-07-01), Garner et al.
patent: 5759897 (1998-06-01), Kadosh et al.
Mead, C. et al., Introduction to VLSI Systems, publishing by Addison-Wesley Published Company, p. 17 (1980).
Wolf, S., Silicon Processing for the VLSI Era. vol. 2: Process Integration, published by Lattice Press, pp. 354-361 (1990).
Gardner Mark I.
Kadosh Daniel
Advanced Micro Devices , Inc.
Wojciechowicz Edward
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