Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1999-06-18
2000-09-19
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257168, 257173, 257481, H01L 2974, H01L 31111
Patent
active
061216402
ABSTRACT:
A monolithic integrated device includes a protection structure and is formed in a semiconductor material substrate having a first conductivity type, which device includes at least a first epitaxial layer formed on the substrate. The integrated device further includes a bipolar first transistor formed of a base region having a second conductivity type and including a first buried region formed in the first epitaxial layer, and having a first diffused region which extends from the first buried region to contact a top surface of the integrated device through a surface contact region with a high concentration of dopant material. The first transistor also has an emitter region with the first conductivity type, embedded in the base region, and including a second buried region formed on the first buried region and a second diffused region, with a high concentration of dopant material, which extends from the second buried region to contact the top surface of the integrated device. The integrated device additionally comprises a second transistor of the MOS type having a drain region formed in the emitter region of the first transistor, said drain region incorporating a third diffused region with a high concentration of dopant material and the first conductivity type which includes a source region of the second transistor. The protection structure is formed of the overlap of the surface contact region and at least one of the diffused regions with a high concentration of dopant material to provide a low breakdown voltage junction of the Zener type.
REFERENCES:
patent: 4032958 (1977-06-01), Yagi et al.
patent: 4051504 (1977-09-01), Hile
patent: 4489340 (1984-12-01), Ueda et al.
patent: 5293051 (1994-03-01), Mariyama et al.
patent: 5923055 (1999-07-01), Schlangenotto et al.
Galanthay Theodore E.
Iannucci Robert
Monin, Jr. Donald L.
Pham Hoai
STMicroelectronics S.r.l.
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