Semiconductor substrate

Details Semiconductor substrate Semiconductor substrate

1985-07-12

1987-02-24

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

148 333, 148 15, 148DIG60, 29576T, 156DIG66, H01L 21324, H01L 2904

Patent

active

046455469

ABSTRACT:
Disclosed is a silicon semiconductor substrate for a semiconductor integrated circuit such as LSI or VLSI. The silicon semiconductor substrate has an oxygen concentration ranging from 3.times.10.sup.17 cm.sup.-3 to 7.times.10.sup.17 cm.sup.-3 and a gettering layer on its backside. This gettering layer may comprise a nonsingle crystalline silicon layer such as polycrystalline silicon layer or amorphous silicon layer, or a layer having stacking fault density of more than 3.times.10.sup.4 cm.sup.-2.

REFERENCES:
patent: 3811975 (1974-05-01), Lierop et al.
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4053335 (1977-10-01), Hu
patent: 4375125 (1983-03-01), Byatt
patent: 4472210 (1984-09-01), Wu et al.
Arst et al, "Increased Oxygen Precipitation in CZ Silicon Wafers Covered by Polysilicon" J. Elec. Mats, vol. 13, No. 5, Sep. 1984 pp. 763-778.
Beyer et al, "Gettering and Barrier Technique" IBM Tech. Disc. Bull., vol. 19, No. 6, Nov. 1976 pp. 2050-2051.
Craven et al, "Internal Gettering in Silicon", Solid State Tech. Jul. 1981 pp. 55-61.
Tice et al, "Precipitation of Oxygen and Intrinsic Gettering in Silicon" Defects In Semiconductors, North Holland, Inc. 1981, pp. 367-380.
Pak et al, "Phosphorus Diffusion Gettering" IBM Tech. Disc. Bull., vol. 18, No. 7, Dec. 1975, p. 2183.
Schlosser et al, "A New Method of Impurity Gettering in Polycrystalline Solarcells" Conf. Record 16th IEEE Photovoltaic Specialists Conf. Jan. 1983, pp. 532-536.
Suzuki, et al., "CZ Silicon Crystals Grown in a Transverse Magnetic Field," Semiconductor Silicon, p. 90, 1981.
Craven et al., "The Effects of Multiple Oxidation on Polysilicon Enhanced Gettered Wafters", ECS Ext. Abstract 83-2, Abstract No. 308, pp. 484-485.

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