Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1997-07-03
2000-01-04
Ballato, Josie
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
324455, G01R 3126, G01N 2760
Patent
active
060114045
ABSTRACT:
The present invention is directed to a system for, and method of, determining a non-contact, near-surface generation and recombination lifetimes and near surface doping of a semiconductor material. The system includes: (1) a radiation pulse source that biases a dielectric on top of the semiconductor material, (2) a voltage sensor to sense the surface voltage, and (3) a photon source to create carriers. For lifetime measurements both the excitation and measurement signals are time dependent and may be probed near the surface of the semiconductor to obtain various electrical properties. For high-field tunneling and leakage characteristics of a thin dielectric (<15 nm) on top of the semiconductor, a high bias charge density is used to induce tunneling, from which tunneling fields and charge-fluence to tunneling of the dielectric are determined.
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Ma Yi
Roy Pradip K.
Ballato Josie
Lucent Technologies - Inc.
Sundaram T. R.
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